Dynamics of Laser-Induced Surface Phase Explosion in Silicon

Time-resolved ultrasonic studies revealed a second, delayed ablative pressure pulse after the first primary plasma pressure pulse in a silicon wafer irradiated by a UV nanosecond laser. The intensity-dependent delay time for the second pulse indicates the existence of a corresponding intensity-dependent homogeneous vapor bubble nucleation time in the superheated molten silicon prior to its phase explosion and ablative removal, since the integral pressure correlates with the ablation rate. A transient hot ablative plasma with calculated peak temperature ∼30–90 eV∼30–90 eV and pressure ∼20–110 GPa∼20–110 GPa is suggested to superheat the bulk silicon via short-wavelength recombination and Bremsstrahlung emission.