Electrical Properties of n-Type (111)Si in Aqueous K4Fe(CN)6 Solution

Peter M. Hoffmann; Gerko Oskam; John E. Schmidt; Peter C. Searson

doi:10.1149/1.1837043

Electrical Properties of n-Type (111)Si in Aqueous K4Fe(CN)6 Solution

Peter M. Hoffmann, Gerko Oskam, John E. Schmidt, Peter C. Searson

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Abstract

<div class="line" id="line-9"> The properties of n&hyphen;type (111) Si surfaces in aqueous 0.1  M   <img src="https://cfn-live-content-bucket-iop-org.s3.amazonaws.com/journals/1945-7111/143/8/2531/revision1/jes_143_8_2531ieqn1.jpg?AWSAccessKeyId=AKIAYDKQL6LTV7YY2HIK&Expires=1665682626&Signature=hQ2F6cy0Pk0jyiH%2FmXk%2FA30xPcE%3D"/>  KCl at pH 9 were studied both in the dark and under illumination. In this solution, oxide passivation of the surface gives rise to a variety of electrically active interface states. Both in the dark and under illumination, interface states interacting with the conduction band are present at an energy of about 0.36 eV below the conduction bandedge, giving rise to a characteristic impedance at potentials close to the flatband potential. Furthermore, interface states which act as recombination centers are observed when the surface is illuminated. The density of recombination centers was found to be a function of the light intensity, ranging from 1 × 10 12  to  <img src="https://cfn-live-content-bucket-iop-org.s3.amazonaws.com/journals/1945-7111/143/8/2531/revision1/jes_143_8_2531ieqn2.jpg?AWSAccessKeyId=AKIAYDKQL6LTV7YY2HIK&Expires=1665682626&Signature=XEm9sgDVKiWKOe6Pa5TLjG90Q5w%3D"/> , indicating that these states are related to oxidation intermediates. The rate constant for recombination was determined to be about  <img src="https://cfn-live-content-bucket-iop-org.s3.amazonaws.com/journals/1945-7111/143/8/2531/revision1/jes_143_8_2531ieqn3.jpg?AWSAccessKeyId=AKIAYDKQL6LTV7YY2HIK&Expires=1665682626&Signature=4UO1KN1UUvCUHblUwVsOv8vI%2Fuw%3D"/> . </div>

Original language	American English
Journal	Journal of the Electrochemical Society
DOIs	https://doi.org/10.1149/1.1837043
State	Published - 1996

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Physical Sciences and Mathematics

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@article{b38f587595784e6986573c266c5a530e,

title = "Electrical Properties of n-Type (111)Si in Aqueous K4Fe(CN)6 Solution",

abstract = " The properties of n&hyphen;type (111) Si surfaces in aqueous 0.1  M    KCl at pH 9 were studied both in the dark and under illumination. In this solution, oxide passivation of the surface gives rise to a variety of electrically active interface states. Both in the dark and under illumination, interface states interacting with the conduction band are present at an energy of about 0.36 eV below the conduction bandedge, giving rise to a characteristic impedance at potentials close to the flatband potential. Furthermore, interface states which act as recombination centers are observed when the surface is illuminated. The density of recombination centers was found to be a function of the light intensity, ranging from 1 × 10 12  to  , indicating that these states are related to oxidation intermediates. The rate constant for recombination was determined to be about  . ",

author = "Hoffmann, {Peter M.} and Gerko Oskam and Schmidt, {John E.} and Searson, {Peter C.}",

year = "1996",

doi = "10.1149/1.1837043",

language = "American English",

journal = "Journal of the Electrochemical Society",

issn = "1945-7111",

}

TY - JOUR

T1 - Electrical Properties of n-Type (111)Si in Aqueous K4Fe(CN)6 Solution

AU - Hoffmann, Peter M.

AU - Oskam, Gerko

AU - Schmidt, John E.

AU - Searson, Peter C.

PY - 1996

Y1 - 1996

N2 - The properties of n&hyphen;type (111) Si surfaces in aqueous 0.1  M    KCl at pH 9 were studied both in the dark and under illumination. In this solution, oxide passivation of the surface gives rise to a variety of electrically active interface states. Both in the dark and under illumination, interface states interacting with the conduction band are present at an energy of about 0.36 eV below the conduction bandedge, giving rise to a characteristic impedance at potentials close to the flatband potential. Furthermore, interface states which act as recombination centers are observed when the surface is illuminated. The density of recombination centers was found to be a function of the light intensity, ranging from 1 × 10 12  to  , indicating that these states are related to oxidation intermediates. The rate constant for recombination was determined to be about  .

AB - The properties of n&hyphen;type (111) Si surfaces in aqueous 0.1  M    KCl at pH 9 were studied both in the dark and under illumination. In this solution, oxide passivation of the surface gives rise to a variety of electrically active interface states. Both in the dark and under illumination, interface states interacting with the conduction band are present at an energy of about 0.36 eV below the conduction bandedge, giving rise to a characteristic impedance at potentials close to the flatband potential. Furthermore, interface states which act as recombination centers are observed when the surface is illuminated. The density of recombination centers was found to be a function of the light intensity, ranging from 1 × 10 12  to  , indicating that these states are related to oxidation intermediates. The rate constant for recombination was determined to be about  .

UR - https://iopscience.iop.org/article/10.1149/1.1837043/pdf

U2 - 10.1149/1.1837043

DO - 10.1149/1.1837043

M3 - Article

SN - 1945-7111

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -

Electrical Properties of n-Type (111)Si in Aqueous K4Fe(CN)6 Solution

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