Etching of SiO/sub 2/ with CO/sub 2/ and CO/sub 2/ + Ar/super +/ Lasers

D. Pan; B. T. Dai; B. S. Agrawalla; K. Imen; S. D. Allen

doi:10.1557/PROC-75-395

Etching of SiO/sub 2/ with CO/sub 2/ and CO/sub 2/ + Ar/super +/ Lasers

D. Pan, B. T. Dai, B. S. Agrawalla, K. Imen, S. D. Allen

University of Southern California

Research output: Contribution to journal › Article › peer-review

Abstract

Dry etching of fused SiO 2 in the presence of several etchants using CO 2 and CO 2 + Ar + lasers yields controlled, rapid removal rates of 10 A o – 500 μm/sec and smooth, high quality surfaces. Etching occurs mainly by thermal ablation of SiO 2 due to strong CO 2 laser absorption. The addition of the Ar + laser, which is absorbed by Br 2 etchant to yield Br atoms, increases the etch rate as a result of a combination of photochemical and gas-phase heating effects.

Original language	American English
Journal	MRS Proceedings
Volume	75
DOIs	https://doi.org/10.1557/PROC-75-395
State	Published - Jan 1986
Externally published	Yes

Keywords

argon lasers
thermal ablation

Disciplines

Atomic, Molecular and Optical Physics

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10.1557/PROC-75-395License: Unspecified

Cite this

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title = "Etching of SiO/sub 2/ with CO/sub 2/ and CO/sub 2/ + Ar/super +/ Lasers",

abstract = " Dry etching of fused SiO 2 in the presence of several etchants using CO 2 and CO 2 + Ar + lasers yields controlled, rapid removal rates of 10 A o – 500 μm/sec and smooth, high quality surfaces. Etching occurs mainly by thermal ablation of SiO 2 due to strong CO 2 laser absorption. The addition of the Ar + laser, which is absorbed by Br 2 etchant to yield Br atoms, increases the etch rate as a result of a combination of photochemical and gas-phase heating effects. ",

keywords = "argon lasers, thermal ablation",

author = "D. Pan and Dai, {B. T.} and Agrawalla, {B. S.} and K. Imen and Allen, {S. D.}",

note = "Etching of SiO 2 with CO 2 and CO 2 + Ar + Lasers - Volume 75 - D. Pan, B. T. Dai, B. S. Agrawalla, K. Imen, S. D. Allen",

year = "1986",

month = jan,

doi = "10.1557/PROC-75-395",

language = "American English",

volume = "75",

journal = "MRS Proceedings",

issn = "1946-4274",

}

TY - JOUR

T1 - Etching of SiO/sub 2/ with CO/sub 2/ and CO/sub 2/ + Ar/super +/ Lasers

AU - Pan, D.

AU - Dai, B. T.

AU - Agrawalla, B. S.

AU - Imen, K.

AU - Allen, S. D.

N1 - Etching of SiO 2 with CO 2 and CO 2 + Ar + Lasers - Volume 75 - D. Pan, B. T. Dai, B. S. Agrawalla, K. Imen, S. D. Allen

PY - 1986/1

Y1 - 1986/1

N2 - Dry etching of fused SiO 2 in the presence of several etchants using CO 2 and CO 2 + Ar + lasers yields controlled, rapid removal rates of 10 A o – 500 μm/sec and smooth, high quality surfaces. Etching occurs mainly by thermal ablation of SiO 2 due to strong CO 2 laser absorption. The addition of the Ar + laser, which is absorbed by Br 2 etchant to yield Br atoms, increases the etch rate as a result of a combination of photochemical and gas-phase heating effects.

AB - Dry etching of fused SiO 2 in the presence of several etchants using CO 2 and CO 2 + Ar + lasers yields controlled, rapid removal rates of 10 A o – 500 μm/sec and smooth, high quality surfaces. Etching occurs mainly by thermal ablation of SiO 2 due to strong CO 2 laser absorption. The addition of the Ar + laser, which is absorbed by Br 2 etchant to yield Br atoms, increases the etch rate as a result of a combination of photochemical and gas-phase heating effects.

KW - argon lasers

KW - thermal ablation

UR - https://doi.org/10.1557/PROC-75-395

U2 - 10.1557/PROC-75-395

DO - 10.1557/PROC-75-395

M3 - Article

SN - 1946-4274

VL - 75

JO - MRS Proceedings

JF - MRS Proceedings

ER -

Etching of SiO/sub 2/ with CO/sub 2/ and CO/sub 2/ + Ar/super +/ Lasers

Abstract

Keywords

Disciplines

Access to Document

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