Growth Kinetics for Copper Deposition on Si(100) from Pyrophosphate Solution

Peter M. Hoffmann; Aleksandar Radisic; Peter C. Searson

doi:10.1149/1.1393571

Growth Kinetics for Copper Deposition on Si(100) from Pyrophosphate Solution

Peter M. Hoffmann, Aleksandar Radisic, Peter C. Searson

Research output: Contribution to journal › Article › peer-review

Abstract

<div class="line" id="line-9"> <span style='color: rgb(51, 51, 51); font-family: -apple-system, BlinkMacSystemFont, "Segoe UI", Roboto, "Noto Sans", Ubuntu, "Droid Sans", "Helvetica Neue", sans-serif; font-size: 16px;'> Pyrophosphate solutions are commonly used in the electronics industry for copper deposition on printed circuit boards. This paper reports on the growth kinetics for copper deposition on silicon from pyrophosphate solution. It is shown that complexation shifts the energetic position of the copper ions in solution with respect to the bandedges for silicon such that deposition occurs via the conduction band. It is shown that the growth kinetics for low Cu(II) concentrations are consistent with progressive nucleation of hemispherical clusters followed by diffusion&hyphen;limited growth. </span></div>

Original language	American English
Journal	Journal of the Electrochemical Society
DOIs	https://doi.org/10.1149/1.1393571
State	Published - 2000

Disciplines

Chemistry

Access to Document

10.1149/1.1393571License: Unspecified

Cite this

@article{5ab389329ef047d6aae397a110fc4ec2,

title = "Growth Kinetics for Copper Deposition on Si(100) from Pyrophosphate Solution",

abstract = " Pyrophosphate solutions are commonly used in the electronics industry for copper deposition on printed circuit boards. This paper reports on the growth kinetics for copper deposition on silicon from pyrophosphate solution. It is shown that complexation shifts the energetic position of the copper ions in solution with respect to the bandedges for silicon such that deposition occurs via the conduction band. It is shown that the growth kinetics for low Cu(II) concentrations are consistent with progressive nucleation of hemispherical clusters followed by diffusion&hyphen;limited growth. ",

author = "Hoffmann, {Peter M.} and Aleksandar Radisic and Searson, {Peter C.}",

note = "1945-7111/147/7/2576 Pyrophosphate solutions are commonly used in the electronics industry for copper deposition on printed circuit boards. This paper reports on the growth kinetics for copper deposition on silicon from pyrophosphate solution. It is shown that complexation shifts the energetic position of the copper ions in solution with respect to the bandedges for silicon such that deposition occurs via the conduction band.",

year = "2000",

doi = "10.1149/1.1393571",

language = "American English",

journal = "Journal of the Electrochemical Society",

issn = "1945-7111",

}

TY - JOUR

T1 - Growth Kinetics for Copper Deposition on Si(100) from Pyrophosphate Solution

AU - Hoffmann, Peter M.

AU - Radisic, Aleksandar

AU - Searson, Peter C.

N1 - 1945-7111/147/7/2576 Pyrophosphate solutions are commonly used in the electronics industry for copper deposition on printed circuit boards. This paper reports on the growth kinetics for copper deposition on silicon from pyrophosphate solution. It is shown that complexation shifts the energetic position of the copper ions in solution with respect to the bandedges for silicon such that deposition occurs via the conduction band.

PY - 2000

Y1 - 2000

N2 - Pyrophosphate solutions are commonly used in the electronics industry for copper deposition on printed circuit boards. This paper reports on the growth kinetics for copper deposition on silicon from pyrophosphate solution. It is shown that complexation shifts the energetic position of the copper ions in solution with respect to the bandedges for silicon such that deposition occurs via the conduction band. It is shown that the growth kinetics for low Cu(II) concentrations are consistent with progressive nucleation of hemispherical clusters followed by diffusion&hyphen;limited growth.

AB - Pyrophosphate solutions are commonly used in the electronics industry for copper deposition on printed circuit boards. This paper reports on the growth kinetics for copper deposition on silicon from pyrophosphate solution. It is shown that complexation shifts the energetic position of the copper ions in solution with respect to the bandedges for silicon such that deposition occurs via the conduction band. It is shown that the growth kinetics for low Cu(II) concentrations are consistent with progressive nucleation of hemispherical clusters followed by diffusion&hyphen;limited growth.

UR - https://iopscience.iop.org/article/10.1149/1.1393571

U2 - 10.1149/1.1393571

DO - 10.1149/1.1393571

M3 - Article

SN - 1945-7111

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -

Growth Kinetics for Copper Deposition on Si(100) from Pyrophosphate Solution

Abstract

Disciplines

Access to Document

Other files and links

Cite this