Mechanism of ArF Laser Induced Photolytic Deposition of W from WF6 on Etched Si and Unetched Si

Xiafang Zhang; Herbert J. Leary; Susan D. Allen

doi:10.1557/PROC-388-139

Mechanism of ArF Laser Induced Photolytic Deposition of W from WF6 on Etched Si and Unetched Si

Xiafang Zhang, Herbert J. Leary, Susan D. Allen

Tulane University

Research output: Contribution to journal › Article › peer-review

Abstract

ArF excimer laser-induced photolytic chemical vapor deposition of W on etched Si substrates using tungsten hexafluoride has been studied. Our experimental results show that tungsten film thickness is proportional to the laser irradiation time and fluence, and that the deposition rate initially increases, then decreases with increasing WF6 pressure. the activation energy obtained from an arrhenius plot is much less than that for conventional CVD. a deposition mechanism has been proposed which yields results in good agreement with the experimental dat A. the absorption cross section of WF6 is determined to be 2.75xl0-18 cm2/molecule.

Original language	American English
Journal	MRS Proceedings
Volume	388
DOIs	https://doi.org/10.1557/PROC-388-139
State	Published - Jan 1995
Externally published	Yes

Keywords

laser beam effects
photolysis
radiation chemistry
tungsten

Disciplines

Atomic, Molecular and Optical Physics

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@article{3ac77925346a4dd6b2625d50e21684c4,

title = "Mechanism of ArF Laser Induced Photolytic Deposition of W from WF6 on Etched Si and Unetched Si",

abstract = " ArF excimer laser-induced photolytic chemical vapor deposition of W on etched Si substrates using tungsten hexafluoride has been studied. Our experimental results show that tungsten film thickness is proportional to the laser irradiation time and fluence, and that the deposition rate initially increases, then decreases with increasing WF6 pressure. the activation energy obtained from an arrhenius plot is much less than that for conventional CVD. a deposition mechanism has been proposed which yields results in good agreement with the experimental dat A. the absorption cross section of WF6 is determined to be 2.75xl0-18 cm2/molecule.",

keywords = "laser beam effects, photolysis, radiation chemistry, tungsten",

author = "Xiafang Zhang and Leary, {Herbert J.} and Allen, {Susan D.}",

note = "Mechanism of ArF Laser induced Photolytic Deposition of W From WF 6 on Etched Si and Unetched Si - Volume 388 - Xiafang Zhang, Herbert J. Leary, Susan D. Allen",

year = "1995",

month = jan,

doi = "10.1557/PROC-388-139",

language = "American English",

volume = "388",

journal = "MRS Proceedings",

issn = "1946-4274",

}

TY - JOUR

T1 - Mechanism of ArF Laser Induced Photolytic Deposition of W from WF6 on Etched Si and Unetched Si

AU - Zhang, Xiafang

AU - Leary, Herbert J.

AU - Allen, Susan D.

N1 - Mechanism of ArF Laser induced Photolytic Deposition of W From WF 6 on Etched Si and Unetched Si - Volume 388 - Xiafang Zhang, Herbert J. Leary, Susan D. Allen

PY - 1995/1

Y1 - 1995/1

N2 - ArF excimer laser-induced photolytic chemical vapor deposition of W on etched Si substrates using tungsten hexafluoride has been studied. Our experimental results show that tungsten film thickness is proportional to the laser irradiation time and fluence, and that the deposition rate initially increases, then decreases with increasing WF6 pressure. the activation energy obtained from an arrhenius plot is much less than that for conventional CVD. a deposition mechanism has been proposed which yields results in good agreement with the experimental dat A. the absorption cross section of WF6 is determined to be 2.75xl0-18 cm2/molecule.

AB - ArF excimer laser-induced photolytic chemical vapor deposition of W on etched Si substrates using tungsten hexafluoride has been studied. Our experimental results show that tungsten film thickness is proportional to the laser irradiation time and fluence, and that the deposition rate initially increases, then decreases with increasing WF6 pressure. the activation energy obtained from an arrhenius plot is much less than that for conventional CVD. a deposition mechanism has been proposed which yields results in good agreement with the experimental dat A. the absorption cross section of WF6 is determined to be 2.75xl0-18 cm2/molecule.

KW - laser beam effects

KW - photolysis

KW - radiation chemistry

KW - tungsten

UR - https://doi.org/10.1557/PROC-388-139

U2 - 10.1557/PROC-388-139

DO - 10.1557/PROC-388-139

M3 - Article

SN - 1946-4274

VL - 388

JO - MRS Proceedings

JF - MRS Proceedings

ER -

Mechanism of ArF Laser Induced Photolytic Deposition of W from WF6 on Etched Si and Unetched Si

Abstract

Keywords

Disciplines

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