Nature of the 0.111-eV acceptor level in indium-doped silicon

R. Baron; J. P. Baukus; S. D. Allen; T. C. McGill; M. H. Young; H. Kimura; H. V. Winston; O. J. Marsh

doi:10.1063/1.90772

Nature of the 0.111-eV acceptor level in indium-doped silicon

R. Baron, J. P. Baukus, S. D. Allen, T. C. McGill, M. H. Young, H. Kimura, H. V. Winston, O. J. Marsh

Hughes Research Laboratory

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	257-259
Number of pages	3
Journal	Applied Physics Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1063/1.90772
State	Published - 1979
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.90772

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title = "Nature of the 0.111-eV acceptor level in indium-doped silicon",

author = "R. Baron and Baukus, {J. P.} and Allen, {S. D.} and McGill, {T. C.} and Young, {M. H.} and H. Kimura and Winston, {H. V.} and Marsh, {O. J.}",

year = "1979",

doi = "10.1063/1.90772",

language = "English",

volume = "34",

pages = "257--259",

journal = "Applied Physics Letters",

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T1 - Nature of the 0.111-eV acceptor level in indium-doped silicon

AU - Baron, R.

AU - Baukus, J. P.

AU - Allen, S. D.

AU - McGill, T. C.

AU - Young, M. H.

AU - Kimura, H.

AU - Winston, H. V.

AU - Marsh, O. J.

PY - 1979

Y1 - 1979

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M3 - Article

AN - SCOPUS:36749109428

SN - 0003-6951

VL - 34

SP - 257

EP - 259

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Nature of the 0.111-eV acceptor level in indium-doped silicon

ASJC Scopus Subject Areas

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