Removal Versus Ablation in KrF Dry Laser Cleaning of Polystyrene Particles from Silicon

Sergey I. Kudryashov; Susan D. Allen

doi:10.1063/1.1503854

Removal Versus Ablation in KrF Dry Laser Cleaning of Polystyrene Particles from Silicon

Sergey I. Kudryashov, Susan D. Allen

Florida State University

Research output: Contribution to journal › Article › peer-review

Abstract

Direct absorption and melting of 0.2, 0.5 and 1.1 μm polystyrene particles on a Si substrate irradiated by 248 nm excimer laser radiation was found to contribute to their dry laser removal via a "hopping" mechanism at cleaning thresholds of 0.05, 0.1, and 0.16 J/cm ² , respectively. Ablation of these particles, which starts near the beginning of substrate deceleration at fluences above 0.4-0.5 J/cm ² , suppresses particle removal due to ablative recoil momentum. At fluences above a second cleaning threshold of 0.7 J/cm ² particles are completely evaporated without any visible surface damage of the Si substrate.

Original language	American English
Journal	Journal of Applied Physics
Volume	92
DOIs	https://doi.org/10.1063/1.1503854
State	Published - Nov 1 2002
Externally published	Yes

Keywords

248 nm excimer laser
direct absorption
dry laser cleaning
fluences
laser removal
particle removal
polystyrene particle
recoil momenta
Si substrates
surface damages
ablation
cleaning
polystyrenes
silicon

Disciplines

Physics

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10.1063/1.1503854License: CC BY

Removal Versus Ablation in KrF Dry Laser Cleaning of PolystyreneFinal published version, 357 KBLicense: CC BY

Cite this

@article{e07b39f9ba874858aaf058bdbfd7e1ba,

title = "Removal Versus Ablation in KrF Dry Laser Cleaning of Polystyrene Particles from Silicon",

abstract = " Direct absorption and melting of 0.2, 0.5 and 1.1 μm polystyrene particles on a Si substrate irradiated by 248 nm excimer laser radiation was found to contribute to their dry laser removal via a {"}hopping{"} mechanism at cleaning thresholds of 0.05, 0.1, and 0.16 J/cm 2 , respectively. Ablation of these particles, which starts near the beginning of substrate deceleration at fluences above 0.4-0.5 J/cm 2 , suppresses particle removal due to ablative recoil momentum. At fluences above a second cleaning threshold of 0.7 J/cm 2 particles are completely evaporated without any visible surface damage of the Si substrate. {\textcopyright} 2002 American Institute of Physics.",

keywords = "248 nm excimer laser, direct absorption, dry laser cleaning, fluences, laser removal, particle removal, polystyrene particle, recoil momenta, Si substrates, surface damages, ablation, cleaning, polystyrenes, silicon",

author = "Kudryashov, {Sergey I.} and Allen, {Susan D.}",

year = "2002",

month = nov,

day = "1",

doi = "10.1063/1.1503854",

language = "American English",

volume = "92",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Removal Versus Ablation in KrF Dry Laser Cleaning of Polystyrene Particles from Silicon

AU - Kudryashov, Sergey I.

AU - Allen, Susan D.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Direct absorption and melting of 0.2, 0.5 and 1.1 μm polystyrene particles on a Si substrate irradiated by 248 nm excimer laser radiation was found to contribute to their dry laser removal via a "hopping" mechanism at cleaning thresholds of 0.05, 0.1, and 0.16 J/cm 2 , respectively. Ablation of these particles, which starts near the beginning of substrate deceleration at fluences above 0.4-0.5 J/cm 2 , suppresses particle removal due to ablative recoil momentum. At fluences above a second cleaning threshold of 0.7 J/cm 2 particles are completely evaporated without any visible surface damage of the Si substrate. © 2002 American Institute of Physics.

AB - Direct absorption and melting of 0.2, 0.5 and 1.1 μm polystyrene particles on a Si substrate irradiated by 248 nm excimer laser radiation was found to contribute to their dry laser removal via a "hopping" mechanism at cleaning thresholds of 0.05, 0.1, and 0.16 J/cm 2 , respectively. Ablation of these particles, which starts near the beginning of substrate deceleration at fluences above 0.4-0.5 J/cm 2 , suppresses particle removal due to ablative recoil momentum. At fluences above a second cleaning threshold of 0.7 J/cm 2 particles are completely evaporated without any visible surface damage of the Si substrate. © 2002 American Institute of Physics.

KW - 248 nm excimer laser

KW - direct absorption

KW - dry laser cleaning

KW - fluences

KW - laser removal

KW - particle removal

KW - polystyrene particle

KW - recoil momenta

KW - Si substrates

KW - surface damages

KW - ablation

KW - cleaning

KW - polystyrenes

KW - silicon

UR - https://commons.erau.edu/db-mechanical-engineering/21

U2 - 10.1063/1.1503854

DO - 10.1063/1.1503854

M3 - Article

VL - 92

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Removal Versus Ablation in KrF Dry Laser Cleaning of Polystyrene Particles from Silicon

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