Shock Wave Studies of Nanosecond Laser-Induced Optical Breakdown in Ablative Plume and Delayed Explosive Boiling

Sergey I. Kudryashov; A. A. Ionin; S. V. Makarov; L. V. Seleznev; D. V. Sinitsyn; K. Lyon; P. Stanley; S. D. Allen

Shock Wave Studies of Nanosecond Laser-Induced Optical Breakdown in Ablative Plume and Delayed Explosive Boiling

Sergey I. Kudryashov, A. A. Ionin, S. V. Makarov, L. V. Seleznev, D. V. Sinitsyn, K. Lyon, P. Stanley, S. D. Allen

Research output: Contribution to conference › Presentation

Abstract

Time-resolved ultrasonic studies revealed a second, delayed ablative pressure pulse after the first primary sub-critical ablative plasma pressure pulse in a silicon wafer irradiated by a 266-nm, 10-ns laser. The intensity-dependent delay time for the second pulse indicates the existence of a corresponding intensity-dependent homogeneous vapor bubble nucleation time in the superheated molten silicon prior its phase explosion and ablative removal, since the

integral pressure correlates with the ablation rate. The transient hot ablative plasma with calculated peak temperature ∼ 30-90 eV and pressure ∼ 20-110 GPa is suggested to superheat the bulk silicon via short-wavelength recombination and Bremsstrahlung emission.

Original language	American English
State	Published - Sep 2011
Externally published	Yes
Event	19th International Conference on Advanced Laser Technologies - Golden Sands, Bulgaria Duration: Sep 1 2011 → …

Conference

Conference	19th International Conference on Advanced Laser Technologies
Period	9/1/11 → …

Keywords

optoacoustics
superheated molten silicon

Disciplines

Physical Sciences and Mathematics

Cite this

@conference{f51282513b794ec8abc134f01de8374d,

title = "Shock Wave Studies of Nanosecond Laser-Induced Optical Breakdown in Ablative Plume and Delayed Explosive Boiling",

abstract = " Time-resolved ultrasonic studies revealed a second, delayed ablative pressure pulse after the first primary sub-critical ablative plasma pressure pulse in a silicon wafer irradiated by a 266-nm, 10-ns laser. The intensity-dependent delay time for the second pulse indicates the existence of a corresponding intensity-dependent homogeneous vapor bubble nucleation time in the superheated molten silicon prior its phase explosion and ablative removal, since the integral pressure correlates with the ablation rate. The transient hot ablative plasma with calculated peak temperature ∼ 30-90 eV and pressure ∼ 20-110 GPa is suggested to superheat the bulk silicon via short-wavelength recombination and Bremsstrahlung emission. ",

keywords = "optoacoustics, superheated molten silicon",

author = "Kudryashov, {Sergey I.} and Ionin, {A. A.} and Makarov, {S. V.} and Seleznev, {L. V.} and Sinitsyn, {D. V.} and K. Lyon and P. Stanley and Allen, {S. D.}",

year = "2011",

month = sep,

language = "American English",

note = "19th International Conference on Advanced Laser Technologies ; Conference date: 01-09-2011",

}

TY - CONF

T1 - Shock Wave Studies of Nanosecond Laser-Induced Optical Breakdown in Ablative Plume and Delayed Explosive Boiling

AU - Kudryashov, Sergey I.

AU - Ionin, A. A.

AU - Makarov, S. V.

AU - Seleznev, L. V.

AU - Sinitsyn, D. V.

AU - Lyon, K.

AU - Stanley, P.

AU - Allen, S. D.

PY - 2011/9

Y1 - 2011/9

N2 - Time-resolved ultrasonic studies revealed a second, delayed ablative pressure pulse after the first primary sub-critical ablative plasma pressure pulse in a silicon wafer irradiated by a 266-nm, 10-ns laser. The intensity-dependent delay time for the second pulse indicates the existence of a corresponding intensity-dependent homogeneous vapor bubble nucleation time in the superheated molten silicon prior its phase explosion and ablative removal, since the integral pressure correlates with the ablation rate. The transient hot ablative plasma with calculated peak temperature ∼ 30-90 eV and pressure ∼ 20-110 GPa is suggested to superheat the bulk silicon via short-wavelength recombination and Bremsstrahlung emission.

AB - Time-resolved ultrasonic studies revealed a second, delayed ablative pressure pulse after the first primary sub-critical ablative plasma pressure pulse in a silicon wafer irradiated by a 266-nm, 10-ns laser. The intensity-dependent delay time for the second pulse indicates the existence of a corresponding intensity-dependent homogeneous vapor bubble nucleation time in the superheated molten silicon prior its phase explosion and ablative removal, since the integral pressure correlates with the ablation rate. The transient hot ablative plasma with calculated peak temperature ∼ 30-90 eV and pressure ∼ 20-110 GPa is suggested to superheat the bulk silicon via short-wavelength recombination and Bremsstrahlung emission.

KW - optoacoustics

KW - superheated molten silicon

M3 - Presentation

T2 - 19th International Conference on Advanced Laser Technologies

Y2 - 1 September 2011

ER -